無冷媒14 T超伝導磁石内蔵1.5 Kクライオスタットの導入と電気抵抗標準の実測

鈴木恭一

福岡工業大学研究所所報   2   7 - 11   2019.12

Tunneling Spectroscopy of Indium Adatom Precisely Manipulated on Cross-Sectional Surface of InAs/GaSb Quantum Structures Reviewed

K. Suzuki, K. Onomitsu, K. Kanisawa

Phys. Rev. B   100   235306-1 - 235306-7   2019.12

永久磁石を用いた半導体2 次元電子系のホール測定

鈴木恭一

福岡工業大学研究所所報   1   19 - 22   2018.12

Landau Level Quantization with Gate Tuning in an AlN/GaN Single Heterostructure Reviewed

K. Suzuki, T. Akasaka

Jpn.J.Appl.Phys.   57   111001-1 - 111001-4   2018.10

Engineering Quantum Spin Hall Insulators by Strained-Layer Heterostructures Reviewed

T. Akiho, F. Couëdo, H. Irie, K. Suzuki, K. Onomitsu, K. Muraki

Appl. Phys. Lett.   109   192105-1 - 192105-4   2016.11

Single-Edge Transport in a InAs/GaSb Quantum Spin Hall Insulator Reviewed

F. Couëdo, H. Irie, K. Suzuki, K. Onomitsu, K. Muraki

Phys. Rev. B   94   035301-1 - 035301-5   2016.7

直接ギャップ半導体ヘテロ接合による二次元トポロジカル絶縁体 Invited Reviewed

日本物理学会誌   71   93 - 99   2016.2

直接ギャップ半導体ヘテロ接合によるトポロジカル絶縁体の実現

鈴木恭一，小野満恒二，原田裕一，村木康二

電子情報通信学会技術研究報告 113, No.449, ED2013-136   25 - 30   2016.2

Creating a Topological Insulator Using Semiconductor Heterostructures

K. Suzuki, K. Onomitsu

NTT Technical Review   2015 ( 8 )   2015.8

半導体ヘテロ接合によるトポロジカル絶縁体の実現

鈴木恭一，小野満恒二

NTT技術ジャーナル2015年6月号   34   2015.6

Gate-Controlled Semimetal-Topological Insulator Transition in an InAs/GaSb Heterostructure Reviewed

K. Suzuki, Y. Harada, K. Onomitsu, K. Muraki

91   245309-1 - 245309-6   2015.5

Edge Channel Transport in InAs/GaSb Topological Insulating Phase Reviewed

K. Suzuki, Y. Harada, K. Onomitsu, K. Muraki

Phys. Rev. B   87   235311-1 - 235311-6   2013.5

Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer Reviewed International coauthorship

K. Suzuki, Y. Harada, F. Maeda, K. Onomitsu, T. Yamaguchi, K. Muraki

Appl. Phys. Express   4   125702-1 - 125702-3   2011.7

Assembling Indium Atoms into Nanostructures on a Cleaved InAs(110) Surface Reviewed International coauthorship

K. Suzuki, Stefan Fölsch, K. Kanisawa

Appl. Phys. Express   4   085002-1 - 085002-3   2011.6

Low-Temperature Scanning Tunneling Microscopy of Self-Assembled InAs Quantum Dots Grown by Droplet Epitaxy Reviewed International coauthorship

C. Durand, A. Peilloux, K. Suzuki, K. Kanisawa, B. Grandidier, K. Muraki

Physics Procedia   3   1299 - 1304   2010.1

Optimization of 2DEG InAs/GaSb Hall Sensors for Single Particle Detection Reviewed International coauthorship

O. Kazakova, J. C. Gallop, D. C. Cox, E. Brown, A. Cuenat, and K. Suzuki

IEEE TRANS. MAG.   44   4480 - 4483   2008.11

半導体デバイス中の量子状態実空間観測

NTT技術ジャーナル2008年10月号   12   2008.10

Spatial Imaging of Valence Band Electronic Structures in a GaSb/InAs Quantum Well Reviewed

K. Suzuki, K. Kanisawa, S. Perraud, T. Fujisawa

Appl. Surf. Sci   254   7889 - 7892   2008.9

Imaging of Quantum Confinement and Electron Wave Interference

K. Suzuki, K. Kanisawa

NTT Technical Review　2008年8月号   2008.8

Semiconductor heterostructure Studies by using Emerging Technologies

Y. Hirayama, T. Sogawa, K. Suzuki, K. Kanisawa, H. Yamaguchi

Phys. Stat. Sol. (b)   244   2988 - 3001   2007.8

Observation of Subband Standing Waves in Superlattices by Low-Temperature Scanning Tunneling Spectroscopy Invited Reviewed

K. Suzuki, K. Kanisawa, S. Perraud, M. Ueki, K. Takashina, Y. Hirayama)

J. Appl. Phys.   101   081705-1 - 081705-4   2007.4

Imaging of Subbands in InAs/GaSb Double Quantum Wells by Low-Temperature Scanning Tunneling Spectroscopy Reviewed

K. Suzuki, K. Kanisawa, S. Perraud, M. Ueki, K. Takashina, Y. Hirayama

J. Cryst. Growth   301-302   97 - 100   2007.4

Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy Reviewed

K. Suzuki, K. Kanisawa, S. Perraud, M. Ueki, K. Takashina, Y. Hirayama

Jpn. J. Appl. Phys.   46   2618 - 2621   2007.4

Spatial Imaging of Two-Dimensional Electronic States in Semiconductor Quantum Wells Reviewed

K. Suzuki, K. Kanisawa, C. Janer, S. Perraud, K. Takashina, T. Fujisawa, Y. Hirayama

Phys. Rev. Lett.   98   136802-1 - 136802-4   2007.3

Current Focusing in InSb Heterostructures Reviewed International coauthorship

A. R. Dedigama, D. Deen, S. Q. Murphy, N. Goel, J. C. Keay, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Physica E   34   647 - 650   2006.8

Imaging of Electron Standing Waves in InAs/GaSb superlattices by Low-Temperature Scanning Tunneling Spectroscopy Reviewed

K. Suzuki, K. Kanisawa, S. Perraud, M. Ueki, K. Takashina, Y. Hirayama

Physica Status Solidi (c)   3   643 - 646   2006.3

電子-正孔共存系半導体ヘテロ構造における磁場中での 2 次元キャリア相関

鈴木恭一

東北大学博士論文   2005.3

Ballistic Transport in InSb Mesoscopic Structures Reviewed International coauthorship

N. Goel, J. Graham, J. C. Keay, K. Suzuki, S. Miyashita, M. B. Santos, Y. Hirayama

Physica E   26   455 - 459   2005.2

Landau-Level Hybridization and the Quantum Hall Effect in InAs/(AlSb)/GaSb Electron-Hole Systems Reviewed

K. Suzuki, K. Takashina, S. Miyashita, Y. Hirayama

Phys. Rev. Lett.   93   016803-1 - 016803-4   2004.7

Effect of Temperature on Ballistic Transport in InSb Quantum Wells Reviewed International coauthorship

N. Goel, S.J. Chung, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama

Physica E   21   761 - 764   2004.3

Ballistic Electron Transport in InSb Quantum Wells at High Temperature Reviewed International coauthorship

N. Goel, K. Suzuki, S. Miyashita, S. J. Chung, M. B. Santos, Y. Hirayama

Physica E   20   232 - 235   2004.1

Quantum Hall Effect in Back-Gated InAs/GaSb Heterostructures under a Tilted Magnetic Field Reviewed

K. Suzuki, S. Miyashita, K. Takashina, Y. Hirayama

Physica E   20   232 - 235   2004.1

Transport Properties in Asymmetric InAs/(AlSb)/GaSb Electron-Hole Hybridized Systems Reviewed

K. Suzuki, S. Miyashita, Y. Hirayam

Phys. Rev. B   67   195319-1 - 195319-8   2003.5

Quantum Hall Effect in Back-Gated InAs/(AlSb)/GaSb Heterostructures

K. Suzuki, S. Miyashita, Y. Hirayama

Inst. of Phys. Conf. Ser. in CD-ROM   171   2003.5

Transport Properties in Back-Gated InAs/GaSb Heterostructures Reviewed

K. Suzuki, S. Miyashita, Y. Hirayama

Compound Semiconductors, Inst. of Phys. Conf. Ser.   170   339 - 344   2002.9

InAs/GaSb系ヘテロ構造の電子-正孔相関

鈴木恭一，宮下宣，平山祥郎

電子情報通信学会技術研究報101 No.617, SDM2001-233   41 - 48   2002.1

Back-Gate Control in an InAs-Based Two-Dimensional System Reviewed

K. Suzuki, S. Miyashita, Y. Hirayama

Physica C   352   125 - 127   2001.4

Electron and Hole Proximity Effecs in the InAs/AlSb/GaSb System Reviewed

J. H. Roslund, K. Saito, K. Suzuki, H. Yamaguchi and Y. Hirayama

Jpn. J. Appl. Phys. Pt.1   39   2448 - 2451   2000.4

Magnetophotoluminescence in n- and p-type Si-Modulation-Doped AlGaAs/GaAs Single-Heterostructures Reviewed

K. Suzuki, K. Saito, K. Muraki, Y. Hirayama

COMPOUND SEMICONDUCTORS 1998, Inst. of Phys. Conf. Ser.   162   155 - 160   1999.9

Photoluminescence from a Modulation-Doped AlGaAs/GaAs Heterointerfece under Cyclotron Resonance Reviewed

K. Suzuki, K. Saito, K. Muraki, Y. Hirayama

Phys. Rev. B   58   15385 - 15388   1998.12

Optically Detected Cyclotron Resonance by Multichannel spectroscopy Reviewed

K. Suzuki, K. Saito, T. Saku, Y. Hirayam

Jpn. J. Appl. Phys. Pt.1   36   926 - 929   1997.2

Electron Distribution in Modulation Doped AlGaAs/GaAs Single Quantum Wells　and Inverted Modulation Doped GaAs/AlGaAs Heterostructures Reviewed

K. Suzuki, K. Saito, T. Saku, A. Sugimura,　 Y. Horikoshi, S. Yamada

J. Cryst. Growth   150   1226 - 1269   1995.5

Preparation and Properties of CdMnSe Microcrystallites Embedded in SiO2 Glass Film Reviewed

K. Yanata, K. Suzuki, and Y. Ok

Jpn. J. Appl. Phys. Pt.1 Suppl.   32-3   384 - 385   1993.9

Growth of CdTe/ZnTe Strained-Layer Superlattices by Hot-Wall Epitaxy and Their Characterization Reviewed

M. Takahashi, S. Muto, K. Suzuki, Y. Oka

Physics of semiconductors   879 - 885   1993.8

Magneto-Optical Properties of CdMnSe Microcrystallites in Glass Reviewed

K. Yanata, K. Suzuki, Y. Oka

Physics of semiconductors   1371 - 1376   1993.8

Optical Study of Localized Exciton States in CdTe/ZnTe Superlattices Reviewed

H. Okamoto, K. Suzuki, K. Tsuzuki, M. Takahashi, and Y. Oka

Jpn. J. Appl. Phys. Pt.1 Suppl.   32-3   746 - 748   1993.5

Magneto‐optical properties of Cd1−xMnxSe microcrystallites in SiO2 glass prepared by rf sputtering Reviewed

K. Yanata, K. Suzuki, and Y. Oka

J. Appl. Phys.   73 ( 9 )   4595 - 4598   1993.5

Photoluminescence of Fine Semiconductor (CdS, CdSe, Ge) Particle-Doped Films Prepared by a Mutual Counter Diffusion Method and a Sol-Gel Process Reviewed

Y. Kobayashi, Y. Kakegawa, Y. Kurokawa, K. Suzuki, and Y. Oka

J. Ceramic Soc. Jpn   101 ( 1169 )   69 - 72   1993.1

Magneto-Optical Properties of Low-Dimensional Excitons in Microcrystals and Superlattices of CdMnTe Reviewed

K. Suzuki, M. Nakamura, I. Souma, K. Yanata, Y. Oka, H. Fujiyasu, and H. Noma

J. Cryst. Growth   117 ( 1-4 )   881 - 885   1992.2

直接ギャップ半導体ヘテロ接合によるトポロジカル絶縁体の実現

鈴木恭一, 小野満恒二, 原田裕一, 村木康二

電子情報通信学会技術研究報告   113 ( 449 )   25   2014.2

半導体デバイス中の量子状態実空間観測

鈴木恭一、蟹澤聖

NTT技術ジャーナル   2008.10

Imaging of Quantum Confinement and Electron Wave Interference

K. Suzuki and K. Kanisawa

NTT Technical Review   2008.8

InAs/GaSb系ヘテロ構造の電子-正孔相関

鈴木恭一、宮下宣、平山祥郎

電子情報通信学会技術研究報告   101 ( 617 )   41   2002.1

InAs/GaSbヘテロ構造断面上の原子操作とトンネル機構

鈴木恭一，小野満恒二，蟹澤聖

第80回応用物理学会秋季学術講演会  2019.9 

AlN/GaN単一ヘテロ接合の量子ホール効果とゲート制御

鈴木恭一，赤坂 哲也

第79回応用物理学会秋季学術講演会   2018.9  応用物理学会

III-V族半導体によるトポロジカル絶縁体の実現 ～InAs/GaSb量子スピンホール系のエッジ伝導～ Invited

鈴木恭一

日本物理学会第70回年次大会  2015.3 

III-V族半導体ヘテロ構造による2次元トポロジカル絶縁体の実現 Invited

日本表面科学会中部支部研究会　  2014.10  日本表面科学会中部支部

Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy Invited

Kyoichi Suzuki

2008.9  The Japan Socoiety of Applied Physics

Observation of Subband Standing Waves in Superlattices by Low-Temperature Scanning Tunneling Spectroscopy Invited International conference

Kyoichi Suzuki

28th. Int. Conf. on Phys. of Semiconductors [ICPS-28], Vienna, Austria  2006.7 

2023   電気工学総合

2023   Graduation Study

2023   Advanced Technologies and Physics in

2022   Fundamental of Electric Materials

2022   Introduction to Electrical Engineering

2022   Elementary Electric Experiment

2022   Semiconductor Engineering

2022   Introduction to Fundamentals of

2022   電気工学総合

2022   Graduation Study

2022   Research Study for Master's Thesis in

2021   Fundamental of Electric Materials

2021   Introduction to Electrical Engineering

2021   Elementary Electric Experiment

2021   Semiconductor Engineering

2021   Introduction to Fundamentals of

2021   電気工学総合

2021   Graduation Study

2021   Training for International Conference

2021   Advanced Technologies and Physics in

2020   Fundamental of Electric Materials

2020   Introduction to Electrical Engineering

2020   Elementary Electric Experiment

2020   Semiconductor Engineering

2020   電気工学総合

2020   Introduction to Fundamentals of

2020   Graduation Study

2020   Advanced Technologies and Physics in

2019   Fundamental of Electric Materials

2019   Introduction to Electrical Engineering

2019   Elementary Electric Experiment

2019   Semiconductor Engineering

2019   Integrated Circuits

2019   Electrical Engineering Synthesis

2019   Graduation Study

2019   Advanced Technologies and Physics in

2018   Fundamental of Electric Materials

2018   Introduction to Electrical Engineering

2018   Semiconductor Engineering

2018   Integrated Circuits

2018   Elementary Electric Experiment

2018   Electrical Engineering Synthesis

2018   Graduation Study

2018   Seminar on Fundamentals of Electrical

2018   Advanced Technologies and Physics in

2017   Fundamental of Electric Materials

2017   Introduction to Electrical Engineering

2017   Integrated Circuits

2017   Semiconductor Engineering

2017   Elementary Electric Experiment

2017   Graduation Study

2017   Advanced Technologies and Physics in